Coherent infrared radiation has been observed from forward biased GaAs p-n junctions. Evidence for this behavior is based upon the sharply beamed radiation pattern of the emitted light, upon the observation of a threshold current beyond which the intensity of the beam increases abruptly, and upon the pronounced narrowing of the spectral distribution of this beam beyond threshold. The stimulated emission is believed to occur as the result of transitions between states of equal wave number in the conduction and valence bands.
Primeros láseres de semiconductor.
- Autor/es: R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, R. O. Carlson.
- Fecha: 1962-11
- Publicado en: Physical Review Letters 9, 366-368, November 1962.
- Idioma: Inglés
- Formato: PDF
- Contribución: José Antonio Martín Pereda.
- Palabras clave: Láseres y electroóptica