Recent attempts have been made to increase the efficiency of solar cells by introducing an impurity level in the semiconductor band gap. We present an analysis of such a structure under ideal conditions. We prove that its efficiency can exceed not only the Shockley and Queisser efficiency for ideal solar cells but also that for ideal two-terminal tandem cells which use two semiconductors, as well as that predicted for ideal cells with quantum efficiency above one but less than two.

Notas/Comentarios de Antonio Luque López:
Células solares de banda intermedia de 3ª generación.



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