A characteristic effect of stimulated emission of radiation1 in a fluorescing material i s the narrowing of the emission line as the excitation is increased. We have observed such narrowing of an emission line from a forward-biased GaAs p-n junction. As the injection current is increased, the emission line at 77°K narrows by a factor of more than 20 to a width of less than kT/5. We believe that this narrowing is direct evidence for the occurrence of stimulated emission...
Notas/Comentarios de José Antonio Martín Pereda:
Primeros láseres de semiconductor.
Primeros láseres de semiconductor.
Especificaciones
- Autor/es: Marshall I. Nathan, William P. Dumke, Gerald Burns, Frederick H. Dill Jr., Gordon Lasher.
- Fecha: 1962-11
- Publicado en: Applied Physics Letters Volume 1, Issue 3, page 62, november 1962.
- Idioma: Inglés
- Formato: PDF
- Contribución: José Antonio Martín Pereda.
- Palabras clave: Láseres y electroóptica