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In this paper, we present a practical process to obtain bifacial Si solar cells. These cells are made using p/sup +/nn/sup +/ structure on high-medium base resistivity, continuous emitters and with a process that maintains high bulk minority carrier lifetime. Efficiencies of 19.1% and 18.1% are achieved under standard conditions when the cell is illuminated by n/sup +/n high-low junction and when it is illuminated by p/sup +/n junction, respectively. We show that the n/sup +/n high-low junction provides a higher current density and a good ratio between generated current of each face is found to be of about 103%.

Notas/Comentarios de Antonio Luque López:
La célula solar bifacial.

Especificaciones

  • Autor/es: A.Moehlecke; I.Zanesco; A.Luque.
  • Fecha: 1994-12
  • Publicado en: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
  • Idioma: Inglés
  • Formato: PDF
  • Contribución: Antonio Luque López.
  • Palabras clave: Dispositivos electrónicos, Ingeniería eléctrica y energía
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